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Beilstein J. Nanotechnol. 2015, 6, 1467–1484, doi:10.3762/bjnano.6.152
Figure 1: Schematic overview of electrochemical equilibrium (a) in large bandwidth inorganic semiconductors a...
Figure 2: Equivalent circuit for the one diode model. The diode, D, describes the part of the circuit that re...
Figure 3: (a) Cross section of a simulated electron beam generation volume directly at the PCMO–STNO interfac...
Figure 4: Temperature dependence of the J–V characteristics for the PCMO–STNO junction: (a) in a linear and (...
Figure 5: (a) Illustration of the manual parameter identification method, (b) Comparison of the measured data...
Figure 6: Overview of the temperature dependence of the extracted diode parameters for the two analysis metho...
Figure 7: Determination of the energy barrier EB: (a) from the diode parameter analysis of the J–V characteri...
Figure 8: Determination of the activation energy, EA,RS, for thermally activated hopping transport from the s...
Figure 9: Determination of the activation energy, EA,RP, of the thermally activated hopping transport for the...
Figure 10: Schematic band structure of a PCMO–STNO heterojunction (a) at zero bias, (b) in the forward directi...
Figure 11: (a) Comparison of J–V curves from the least squares fit and exemplarily data at a temperature of 22...
Figure 12: (a) Sketch of the sample geometry for the electrical measurements in the cryostat, and (b) sketch o...